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DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * * * Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package
Mechanical Data
* * * * * * *
DFN1310H4-6
Case: DFN1310H4-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3
D1 G2 S2
ESD protected
G1 D2 TOP VIEW Internal Schematic
S1
Maximum Ratings
Drain-Source Voltage
@TA = 25C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 20 10 200 250 Unit V V mA
Characteristic
Gate-Source Voltage Drain Current per element (Note 1)
Thermal Characteristics
Total Power Dissipation (Note 1)
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 350 357 -65 to +150 Unit mW C/W C
Characteristic
Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
@TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (per element) (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage VGS(th) 0.53 40 0.9 0.85 1.2 2.4 2.5 0.9 1.5 1.7 1.7 3.5 3.5 V VDS = VGS, ID = 100A VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA VDS = 3V, ID = 10mA BVDSS IDSS IGSS 20 10 5 V A A VGS = 0V, ID = 100A VDS = 17V, VGS = 0V VGS = 8V, VDS = 0V
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Notes: 1. 2. 3. 4. 5.
Yfs
mS
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
1 of 5 www.diodes.com
October 2009
(c) Diodes Incorporated
DMN2005DLP4K
2 1.8 1.6 ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0
VGS = 1.4V VGS = 1.6V TA = 25oC VGS =1.8V VGS = 2.0V
VGS = 1.2V VGS = 1.0V
2 1 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
4
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
0.6
0.8
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
0.4
0.6
0.4
0.2
0.2
50 75 100 125 150 0 -25 25 TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
0.8
0 -50
0.1 1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
5
0 0.001
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
0.6
4
3
0.4
2
0.2
1
0.01 0.1 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
0.1 0.001
0 2 3 4 5 6 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage 0
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
2 of 5 www.diodes.com
October 2009
(c) Diodes Incorporated
DMN2005DLP4K
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature
|YfS|, FORWARD TRANSFER ADMITTANCE (S)
VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current
Ordering Information
Part Number DMN2005DLP4K-7
Notes:
(Note 6) Case DFN1310H4-6 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DL = Product Type Marking Code
DL
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
3 of 5 www.diodes.com
CT, CAPACITANCE (pF)
October 2009
(c) Diodes Incorporated
DMN2005DLP4K
Package Outline Dimensions
A
A1 A3 Z B
D2
R0. 15 0
E2 d L
E
f
d D
e
z
DFN1310H4-6 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 A3 0.13 b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 E2 0.30 0.50 0.40 f 0.10 L 0.20 0.30 0.25 Z 0.05 All Dimensions in mm
Suggested Pad Layout
G2
X2 Y2 G1
b Y1
G3
a
X1
Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b
Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
4 of 5 www.diodes.com
October 2009
(c) Diodes Incorporated
DMN2005DLP4K
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
5 of 5 www.diodes.com
October 2009
(c) Diodes Incorporated

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